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| Ordering number : ENA1168 SFT1201 SANYO Semiconductors DATA SHEET SFT1201 Applications * NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features * * * * * Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25C Conditions Ratings 150 150 120 7 2.5 4 500 1 15 150 --55 to +150 Unit V V V V A A mA W W C C Marking : T1201 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 73008EA TI IM TC-00001476 No. A1168-1/4 SFT1201 Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=100V, IE=0A VEB=5V, IC=0A VCE=5V, IC=100mA VCE=10V, IC=100mA VCB=10V, f=1MHz IC=1A, IB=100mA IC=1A, IB=100mA IC=10A, IE=0A IC=100A, RBE=0 IC=1mA, RBE= IE=10A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 150 150 120 7 50 1250 60 200 130 13 100 0.85 150 1.2 Ratings min typ max 1 1 560 MHz pF mV V V V V V ns ns ns Unit A A Package Dimensions unit : mm (typ) 7518-003 6.5 5.0 2.3 1.5 Package Dimensions unit : mm (typ) 7003-003 6.5 5.0 2.3 4 4 1.5 0.5 0.5 5.5 7.0 5.5 7.0 0.8 1.6 1.2 7.5 1 0.6 2 0.8 0.85 0.7 0.85 0.5 3 0 to 0.2 1.2 2.5 1.2 0.6 0.5 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 2.3 Switching Time Test Circuit IB1 OUTPUT IB2 VR RB PW=20s D.C.1% INPUT RL 50 + 100F VBE= --5V + 470F VCC=60V IC=10IB1= --10IB2=0.5A No. A1168-2/4 SFT1201 2.5 IC -- VCE mA 200 160 mA 120mA 100mA 80mA 60mA 2.5 IC -- VCE 120mA 100mA 80mA 250 mA Collector Current, IC -- A Collector Current, IC -- A 2.0 2.0 60mA mA 40mA 1.5 500 1.5 40mA 20mA 1 A 60m mA 20mA 200 1.0 1.0 10mA 0.5 10mA 5mA 2mA 5mA 0.5 1mA IB=0mA 0 1 2 3 4 5 IT13534 0 0 0.1 0.2 0.3 IB=0mA 0.4 0.5 IT13533 0 Collector-to-Emitter Voltage, VCE -- V 3.0 IC -- VBE Collector-to-Emitter Voltage, VCE -- V 1000 hFE -- IC VCE=5V 2.5 7 5 VCE=5V Ta=75C 25C Collector Current, IC -- A DC Current Gain, hFE 3 2 2.0 --25C 1.5 100 7 5 3 2 10 0.01 1.0 5C 25C 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT13535 Ta= 7 --25C 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Base-to-Emitter Voltage, VBE -- V 3 Collector Current, IC -- A 7 IT13536 fT -- IC Cob -- VCB f=1MHz VCE=10V Gain-Bandwidth Product, fT -- MHz 5 Output Capacitance, Cob -- pF 2 3 5 7 2 3 5 7 2 3 2 100 7 5 10 7 5 3 2 0.01 0.1 Collector Current, IC -- A 7 3 2 1.0 IT13537 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 VCE(sat) -- IC Collector-to-Base Voltage, VCB -- V 3 5 7 100 IT13538 VBE(sat) -- IC IC / IB=10 IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 0.1 7 5 1.0 Ta= --25C 7 5 C 25 3 2 75C 25C C Ta=75 --25C 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 3 0.01 0.01 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Collector Current, IC -- A IT13539 Collector Current, IC -- A IT13540 No. A1168-3/4 SFT1201 7 5 3 2 ASO ICP=4A IC=2.5A 10 0m <10s 7 5 3 2 ASO ICP=4A IC=2.5A 10 0m <10s s 100 s 100 s 1m s m 10 s 1m Collector Current, IC -- A 1.0 7 5 3 2 0.1 7 5 3 2 Collector Current, IC -- A s 1.0 7 5 3 2 0.1 7 5 3 s 500 s 500 s DC op era tio n m 10 DC s rat ope ion 0.01 0.01 2 3 5 7 0.1 Ta=25C Single pulse 2 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7100 2 3 IT13551 0.01 0.01 2 3 5 7 0.1 Tc=25C Single pulse 2 3 5 7 1.0 2 3 5 7 10 Collector-to-Emitter Voltage, VCE -- V 1.2 PC -- Ta Collector-to-Emitter Voltage, VCE -- V 16 15 14 2 3 5 7100 2 3 IT13552 PC -- Tc Collector Dissipation, PC -- W Collector Dissipation, PC -- W 0 20 40 60 80 100 120 140 160 IT13553 1.0 12 10 8 6 4 2 0.8 0.6 0.4 0.2 0 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C Case Temperature, Tc -- C IT13554 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2008. Specifications and information herein are subject to change without notice. PS No. A1168-4/4 |
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